Emitter
 Infrared emitting
  diode(GaAs)
 Infrared emitting
  diodes (GaAlAs)
 Pin-point LED
  (AlGaInP)
 Detector
 Photodiode
 PIN photodiode
 Daylight sensor
  (Photo IC)
 Phototransistor
 Photo darlington
 Position sensitive
  diode(PSD)
 Photodiode chip




 ■ KODENSHI Opto semiconductor element
■ Emitter - Infrared emitting diodes (GaAlAs)
CL-1CL3
CL-1KL3
CL-1KL7
CL-203
CL-203L
CL-205
CL-207
CL-208
CL-209
CL-211
CL-212
ML-1CL3
ML-1K3
HL601
ML615
HL615
Type No.
Radiant intensity
Po(mW)
Forward voltage
VF(V)
Peak
emission
wavelength
λP(nm)
Typ.
Harf
angle
Δθ(°)
Typ.
Operating
topr .
Topr.
(°C)
Typ.
IF(mA)
Max.
IF(mA)
CL-1CL3
7
40
1.5
40
880
±53
-20∼+70
CL-1KL3
7.5
100
1.7
100
880
±17
-30∼+100
CL-1KL7
8
100
2
100
880
±8
-30∼+100
CL-203
5
50
2
80
880
Max.±9
-40∼+100
CL-205
10
50
2
50
870
±9
-30∼+100
CL-207
2
20
1.6
20
880
±35
-30∼+100
CL-209
4.5
20
1.6
20
880
±85
-20∼+80
CL-211
5
20
1.6
20
870
±12
-30∼+85
ML-1CL3
8
20
1.7
50
865
±53
-20∼+70
HL601
1.5
20
1.7
20
850
±75
-20∼+70
ML615
2.8
20
1.6
20
875
±20
-20∼+70
HL615
2.6
20
1.6
20
850
±20
-20∼+70

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