Emitter
 Infrared emitting
  diode(GaAs)
 Infrared emitting
  diodes (GaAlAs)
 Pin-point LED
  (AlGaInP)
 Detector
 Photodiode
 PIN photodiode
 Daylight sensor
  (Photo IC)
 Phototransistor
 Photo darlington
 Position sensitive
  diode(PSD)
 Photodiode chip



 ■ KODENSHI Opto semiconductor element
■ Emitter - Infrared emitting diode (GaAs)
EL-1CL3
EL-1K3
EL-1KL3
EL-1KL5
EL23G
EL321
EL333
EL333F/F1
EL341
EL342
EL615
Type No.
Radiant in
tensity
Po(mW)
Forward
voltage
VF(V)
Peak
emission
wavelength
λP(nm)
Typ.
Half angle
Δθ(°)
Typ.
Operating
temp.
Topr.
(°C)
Typ.
IF(mA)
Typ.
IF(mA)
1.8
40
1.5
40
940
±53
-20∼+70
4.0
100
1.7
100
940
±36
-40∼+100
7.0
100
1.7
100
940
±15
-30∼+100
5.0
100
1.7
100
940
±5
-40∼+100
8mV
50
1.6
60
940
±30
-20∼+100
550μA
4
1.5
20
940
±30
-20∼+85
3.0mV
20
1.2
50
940
±20
-25∼+85
3.0mV
20
1.2
50
940
±20
-25∼+85
25mW/sr
50
1.5
20
940
±14
-25∼+80
14.0
50
1.5
20
940
±35
0∼+60
1.9
20
1.6
20
940
±20
-20∼+70
EL615S
1.9
20
1.6
20
940
±20
-20∼+70

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