Emitter
 Infrared emitting
  diode(GaAs)
 Infrared emitting
  diodes (GaAlAs)
 Pin-point LED
  (AlGaInP)
 Detector
 Photodiode
 PIN photodiode
 Daylight sensor
  (Photo IC)
 Phototransistor
 Photo darlington
 Position sensitive
  diode(PSD)
 Photodiode chip




 ■ KODENSHI Opto semiconductor element
■ Phototransistor
ST-1CL3H
ST-1KB
ST-1KL3A
ST-1KL3B
ST-1KLA
ST-1KLB
ST-1MLA
ST-1MLAR2
ST-1MLB
ST-1MLBR2
ST23G
ST302
ST305
ST309
ST333R4
ST333R4F
ST333R4F1
ST601
Type No.
Light
current
IL(mA)
Dark
current
Id(nA)
VCEO=10V
Max.
Spectral
sensitivity
λ(nm)
Peak
wavelength
λp(nm)
Typ.
Harf
angle
Δθ(°)
Operating
temp.
Topr.(°C)
Min.
VCE (V)
Ev(lx)
ST-1CL3H
0.08
3
1000
200
480~1000
800
±50
-20~+70
ST-1KB
0.5
10
200
200
500~1050
880
±50
-30~+100
ST-1KL3A
1.5
10
200
200
500~1050
880
±6
-30~+100
ST-1KL3B
1.5
10
200
200
500~1050
880
±6
-30~+100
ST-1KLA
1.5
10
200
200
500~1050
880
±15
-30~+100
ST-1KLB
1.5
10
200
200
500~1050
880
±15
-30~+100
ST-1MLA
0.5
10
200
200
500~1050
880
±70
-25~+90
ST-1MLB
0.5
10
200
200
500~1050
880
±70
-25~+90
ST-1MLBR2
0.5
10
200
200
720~1050
940
±70
-25~+90
ST23G
0.5
5
1000
100
500~1050
880
±30
-20~+100
ST333R4
0.6
5
1000
100
870~1100
960
±20
-25~+85
ST333R4F
0.6
5
1000
100
870~1100
960
±20
-25~+85
ST333R4F1
0.6
5
1000
100
870~1100
960
±20
-25~+85
ST341R2
0.76
5
200
100
720~1050
880
±20
-20~+85
ST601
0.08
3
1000
200
480~1000
800
±65
-25~+80
ST615
3.4
5
1000
100
500~1050
880
±30
-25~+80
*illuminance setting by a specified standard element

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