Emitter
 Infrared emitting
  diode(GaAs)
 Infrared emitting
  diodes (GaAlAs)
 Pin-point LED
  (AlGaInP)
 Detector
 Photodiode
 PIN photodiode
 Daylight sensor
  (Photo IC)
 Phototransistor
 Photo darlington
 Position sensitive
  diode(PSD)
 Photodiode chip




 ■ KODENSHI Opto semiconductor element
■ Position sensitive diode(PSD)
SD-101
SD-201
SD-102
SD-103
SD-202
SD-303
SD-306
SD-503
SD-612
SD-112
SD-112F2
Type No.
Package
Light
current
IL(μA)
Ev=1000lx
Typ.
Capaci-
tance
Ct
(pF)
Typ.
Resi-
stance
Rs
(kΩ)
Typ.
Dark
current
Id(nA)
VR=1V
Max.
Active
area
(mm)
Spectral
sensi-
tivity
λ(nm)
Peak
wave-
lengtd
λp(nm)
Typ.
Operating
topr.
Topr.
(℃)
SD-101
Flat
package
18
10
150
5
2.02x1.0
400~1100
900
-25~+85
SD-201
Flat
package
30
10
150
10
3.02x1.0
400~1100
940
-25~+85
SD-102
Visible
raycut-off
resin
flat
package
11
10
150
2
2.02x1.0
700~1100
920
-25~+85
SD-103
Visible
raycut-off
resin
flat
package
10
10
150
5
2.02x1.0
720~1100
940
-25~+85
SD-202
Visible
raycut-off
resin
flat
package
16
10
150
10
3.02x1.0
700~1100
940
-25~+85
SD-303
Visible
raycut-off
resin
flat
package
13
10
280
5
2.5x1.0
720~1100
940
-25~+85
SD-306
Visible
raycut-off
resin
flat
package
13
14
140
5
2.5x1.0
720~1100
940
-25~+85
SD-503
Visible
raycut-off
resin
flat
package
9
5
150
5
1.5x1.0
720~1100
940
-25~+85
SD-506
Visible
raycut-off
resin
flat
package
8
5
330
5
1.5x1.0
720~1100
940
-25~+85
SD-612
Visible
raycut-off
resin
flat
package
9
10
150
5
1.25x1.0
700~1100
920
-25~+85
SD-112
Witd
attaching
wing
11
10
150
5
2.02x1.0
700~1100
920
-25~+85
SD-112F2
Forming
type
11
10
150
5
2.02x1.0
700~1100
920
-20~+85

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